Optimization of Band Gap and Thickness for the Development of Efficient n-i-p+ Solar Cell

By using an electrical-optical AMPS-1D program (One Dimensional Analysis of Microelectronic and Photonic structures), a n-i-p type solar cell, based on hydrogenated amorphous silicon (a-Si : H) and hydrogenated nanocrystalline silicon oxide (nc-SiOx : H) has been investigated and simulated. The numerical analysis describes the modeling of the external cell performances, like, the short-circuit current (JSC), the open circuit voltage (VOC), the fill factor (FF) and efficiency (Eff) with the oxygen content in the p-ncSiOx : H window layer by varying its mobility band gap (Eg) associated simultaneously to the effect of the absorber layer (i-a-Si : H) thickness. Also, the i-a-Si : H absorber layer band gap was optimized. The simulation result shows that the VOC depend strongly on the band offset (ΔEV) in valence band of p-side. But, VOC does not depend on the thickness of the intrinsic layer. However, VOC increases when the energy band gap of the intrinsic layer is higher. It is demonstrated that the highest efficiency of 10.44 % (JSC = 11.67 mA/cm2; FF = 0.829; VOC = 1070 mV) has been obtained when values of p-nc-SiOx : H window layer band gap, i-a-Si : H absorber layer band gap and i-a-Si : H absorber layer thickness are 2.10 eV, 1.86 eV, and 550 nm, respectively

Optimization of Band Gap and Thickness for the Development of Efficient n-i-p+ Solar Cell

By using an electrical-optical AMPS-1D program (One Dimensional Analysis of Microelectronic and Photonic structures), a n-i-p type solar cell, based on hydrogenated amorphous silicon (a-Si : H) and hydrogenated nanocrystalline silicon oxide (nc-SiOx : H) has been investigated and simulated. The numerical analysis describes the modeling of the external cell performances, like, the short-circuit current (JSC), the open circuit voltage (VOC), the fill factor (FF) and efficiency (Eff) with the oxygen content in the p-ncSiOx : H window layer by varying its mobility band gap (Eg) associated simultaneously to the effect of the absorber layer (i-a-Si : H) thickness. Also, the i-a-Si : H absorber layer band gap was optimized. The simulation result shows that the VOC depend strongly on the band offset (ΔEV) in valence band of p-side. But, VOC does not depend on the thickness of the intrinsic layer. However, VOC increases when the energy band gap of the intrinsic layer is higher. It is demonstrated that the highest efficiency of 10.44 % (JSC = 11.67 mA/cm2; FF = 0.829; VOC = 1070 mV) has been obtained when values of p-nc-SiOx : H window layer band gap, i-a-Si : H absorber layer band gap and i-a-Si : H absorber layer thickness are 2.10 eV, 1.86 eV, and 550 nm, respectively

Electrical properties of short period InAs/GaSb superlattice

International audienc

An ACG View on G-TAG and Its g-Derivation

International audienceG-TAG is a Tree Adjoining Grammar (TAG) based formalism which was specifically designed for the task of text generation. Contrary to TAG, the derivation structure becomes primary, as pivot between the conceptual representation and the surface form. This is a shared feature with the encoding of TAG into Abstract Categorial Grammars. This paper propose to study G-TAG from an ACG perspective. We rely on the reversibility property of ACG that makes both parsing and generation fall within a common morphism inversion process. Doing so, we show how to overcome some limitations of G-TAG regarding predicative adjunction and how to propose alternative approaches to some phenomena

TWAM: A Certifying Abstract Machine for Logic Programs

Type-preserving (or typed) compilation uses typing derivations to certify correctness properties of compilation. We have designed and implemented a type-preserving compiler for a simply-typed dialect of Prolog we call T-Prolog. The crux of our approach is a new certifying abstract machine which we call the Typed Warren Abstract Machine (TWAM). The TWAM has a dependent type system strong enough to specify the semantics of a logic program in the logical framework LF. We present a soundness metatheorem which constitutes a partial correctness guarantee: well-typed programs implement the logic program specified by their type. This metatheorem justifies our design and implementation of a certifying compiler from T-Prolog to TWAM.Comment: 41 pages, under submission to ACM Transactions on Computational Logi

Theories with the independence property

A first-order theory T has the Independence Property provided T ⊢ (Q)(Φ⇒